Best-in-class DMLs for your high-reliability module applications
Lumentum manufactures indium phosphide (InP) directly-modulated lasers (DMLs) in our internal wafer foundry. These DMLs are based on the distributed feedback (DFB) diode lasers. With a DFB, a distributed Bragg reflector is used to accurately lock to the desired wavelength. With the DML, the laser power is directly modulated with a current driver chipset. These are typically silicon-germanium-based high-speed electronic drivers. Lumentum offers multiple data rates and wavelengths including - 100G QSFP28 PSM4/25G SFP28 LR, 100G QSFP28 CWDM4/25G SFP28 BiDi 10 km reach, and 100G QSFP28 LR4 for use in data center applications.
| Product | Description | Product Code |
|---|---|---|
| DML 10G CWDM | The HL1361CP00-Ln is an LR4 CWDM 1271/1291/1311/1331 nm directly modulated laser (DML) diode chip (bare die). Individual chip is designed for 10G operation. | HL1361CP00-Ln |
| DML 10G 1270 nm High Power | The HL1362CP00-L0 is a high power 1270 nm directly modulated laser (DML) diode chip (bare die) for various 10GPON ONU application use. Individual chip is designed for 10G operation. | HL1362CP00-L0 |
| DML 25G CWDM | The HL13BFCP00-x is a 1271/1291/1311/1331 nm directly modulated laser (DML) diode chip (bare die) for 25G operation over the temperature from 20°C to 65°C. | HL13BFCP00-Ln |
| DML 25G TDM | The HL13BFCP01 is a 1310 nm directly modulated laser (DML) diode chip for 25G operation over I-Temp from -40°C to 85°C. | HL13BFCP01 |
| DML 25G CWDM for Extended Temperature | The HL13BFCP02-Ln (Ln: L0, L1, L2 or L3) is a 1271/1291/1311/1331 nm CWDM directly modulated laser (DML) diode chip (bare die) for 25G operation over the temperature from -5°C to 85°C. | HL13BFCP02-Ln |
| DML 50G PAM4 CWDM | The HL13CGCP02-Ln (Ln: L0, L1, L2, or L3) is a 1271/1291/1311/1331 nm CWDM directly modulated laser (DML) diode chip (bare die) for 50G PAM4 operation (26.6 Gbaud 4-level pulse amplitude modulation) over the temperature from 0°C to 80°C. | HL13CGCP02-Ln |
| Product | DML 10G CWDM |
|---|---|
| Description | The HL1361CP00-Ln is an LR4 CWDM 1271/1291/1311/1331 nm directly modulated laser (DML) diode chip (bare die). Individual chip is designed for 10G operation. |
| Product Code | HL1361CP00-Ln |
| Product | DML 10G 1270 nm High Power |
| Description | The HL1362CP00-L0 is a high power 1270 nm directly modulated laser (DML) diode chip (bare die) for various 10GPON ONU application use. Individual chip is designed for 10G operation. |
| Product Code | HL1362CP00-L0 |
| Product | DML 25G CWDM |
| Description | The HL13BFCP00-x is a 1271/1291/1311/1331 nm directly modulated laser (DML) diode chip (bare die) for 25G operation over the temperature from 20°C to 65°C. |
| Product Code | HL13BFCP00-Ln |
| Product | DML 25G TDM |
| Description | The HL13BFCP01 is a 1310 nm directly modulated laser (DML) diode chip for 25G operation over I-Temp from -40°C to 85°C. |
| Product Code | HL13BFCP01 |
| Product | DML 25G CWDM for Extended Temperature |
| Description | The HL13BFCP02-Ln (Ln: L0, L1, L2 or L3) is a 1271/1291/1311/1331 nm CWDM directly modulated laser (DML) diode chip (bare die) for 25G operation over the temperature from -5°C to 85°C. |
| Product Code | HL13BFCP02-Ln |
| Product | DML 50G PAM4 CWDM |
| Description | The HL13CGCP02-Ln (Ln: L0, L1, L2, or L3) is a 1271/1291/1311/1331 nm CWDM directly modulated laser (DML) diode chip (bare die) for 50G PAM4 operation (26.6 Gbaud 4-level pulse amplitude modulation) over the temperature from 0°C to 80°C. |
| Product Code | HL13CGCP02-Ln |